Electrical Characteristics of SCR - based ESD Device for I/O and Power Rail Clamp in 0.35um Process
نویسنده
چکیده
This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V. Keywords—ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up
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SCR-Stacking Structure with High Holding Voltage for I/O and Power Clamp
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